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AON3814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON3814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AON3814 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 20V ID = 6A (VGS = 4.5V) RDS(ON) < 17m (VGS = 4.5V) RDS(ON) < 18.5m (VGS = 4V) RDS(ON) < 24m (VGS = 2.5V) RDS(ON) < 39m (VGS = 1.8V) ESD Protected
DFN 3x3 Top View Bottom View S S S G D D G1 D D
D1
D2
G2
S1
S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current F Pulsed Drain Current Power Dissipation F
B
Maximum 20 12 6 5.3 30 2.4 1.5 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 43 75 36
Max 52 90 50
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3814 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, IG=250A VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=6A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=4V, ID=6A VGS=2.5V, ID=6A VGS=1.8V, ID=6A gFS VSD IS Forward Transconductance VDS=5V, ID=6A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 12 0.4 30 11 15 11.5 14.5 23 14 19 15 19 30 25 0.75 1 3.5 1315 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 219 183 2.1 13.1 VGS=4.5V, VDS=10V, ID=6A 6.7 4.6 1 VGS=5V, VDS=10V, RL=1.7, RGEN=3 2.8 5.6 5.9 17 24 18.5 24 39 m S V A pF pF pF k nC nC nC s s s s 0.71 1.1 Min 20 1 5 10 Typ Max Units V A A V V A m m
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The power dissipation and current rating is based on the t 10s thermal resistance, and current rating is also limited by wire-bonding. Rev 2:Sep 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3814 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 10V 4V 20 ID(A) 3V ID(A) 10 125C 5 25C -40C VGS =2V 15 20 VDS=5V
10
VGS =1.5V
0 0 1 2 3 4 5 VDS(Volts)
0 0.0 0.5 1.0 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics
c Figure 1: On-Regions Characteristi s
40 VGS =1.8V Normalize ON-Resistance 35 30 RDS(ON)(m) 25 20 15 10 5 0 5 10 15 20 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS =4.5V VGS =4V VGS =2.5V
1.6 VGS=2.5V VGS=4V 1.2 VGS=4.5V VGS=1.8V 1.0
1.4
ID=6A
0.8 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
30 ID=6A
1E+01 1E+00 125C
25 RDS(ON)(m) 1E-01 20 125C IS(A)
-40C 1E-02 1E-03
15
25C 1E-04
25C
10 0 2 4 6 8 10 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3814 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500 VDS=10V 4 VGS(Volts) 3 2 1 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics Capacitance (pF) 2000 1500 1000 500 0 0 Crss 5 10 15 20 Ciss
5
ID=6A
Coss
VDS(Volts) Figure 8: Capacitance Characteristics
100.00 10s 10.00 ID (Amps) RDS(ON) limited TJ(Max)=150C TA=25C 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) DC 1ms 10ms 0.1s 1s 10s Power (W) 100s 1.00
40 30 20 10 0 0.001 TJ(Max)=150C TA=25C
0.10
0.01 10 100
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
1
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=52C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Ton T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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